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IPN80R900P7ATMA1

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IPN80R900P7ATMA1

Product Category : MOSFET

Vgs (Max) : ±20V

Current - Continuous Drain (Id) @ 25°C : 6A (Tc)

FET Type : N-Channel

Mounting Type : Surface Mount

Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V

Manufacturer : Infineon Technologies

Minimum Quantity : 3000

Drive Voltage (Max Rds On, Min Rds On) : 10V

Operating Temperature : -55°C ~ 150°C (TJ)

FET Feature : -

Series : CoolMOS™ P7

Input Capacitance (Ciss) (Max) @ Vds : 350pF @ 500V

Supplier Device Package : PG-SOT223

Part Status : Active

Packaging : Tape & Reel (TR)

Rds On (Max) @ Id, Vgs : 900 mOhm @ 2.2A, 10V

Power Dissipation (Max) : 7W (Tc)

Package / Case : SOT-223-3

Technology : MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id : 3.5V @ 110µA

Drain to Source Voltage (Vdss) : 800V

Description : MOSFET N-CHANNEL 800V 6A SOT223

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The IPN80R900P7ATMA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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